Nonvolatile semiconductor memory

ABSTRACT

A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent

Application No. 2008-308608, filed Dec. 3, 2008, the entire contents ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a verify read operation of anonvolatile semiconductor memory.

2. Description of the Related Art

A nonvolatile semiconductor memory in which one cell unit is composed ofa plurality of memory cells, a

NAND flash memory, for example (refer to U.S. Patent ApplicationPublication No. 2004/0109357, for example) is required to narrow thewidth of a threshold distribution of the memory cell in a written stateby lowering an operation voltage, and storing three or more values inone memory cell to implement a multi-level cell.

To satisfy this request, a write method such as QPW (Quick Pass Write)has been proposed. According to the technique of the QPW, the thresholdvoltage of the memory cell after written is classified to one of a firstgroup in a first threshold range before completion of writing, a secondgroup in a second threshold range higher than the first threshold rangebefore completion of writing, and a third group in a third thresholdrange higher than the second threshold range after completion ofwriting, and a write condition is varied according to the three groupsat the time of a rewrite operation.

For example, at the time of rewrite operation, a bit line is set to afirst potential and a usual write operation is performed in the memorycell classified to the first group, a bit line is set to a secondpotential higher than the first potential and a write operation weaker(threshold shift width is smaller) than the usual write operation isperformed in the memory cell classified to the second group, and a bitline is set to a third potential higher than the second potential andthe write operation is inhibited in the memory cell classified to thethird group.

However, since the threshold voltage of the memory cell after written isclassified to one of the three groups in the QPW, two verify readoperations are required.

For example, at the time of first verify read operation, a first verifyread potential is applied to a selected word line and the thresholdvoltage of the memory cell after written is read to verify whether itbelongs to the first group or not. Then, at the time of second verifyread operation, a second verify read potential is applied to theselected word line, and the threshold voltage of the memory cell afterwritten is read to verify whether it belongs to the second or thirdgroup.

Thus, since the two verify read operations are needed in the QPW, theproblem is that a write time is increased. As for the multi-levelnonvolatile semiconductor memory especially, since an operation ofloading data in the memory cell is added before write operation, theincrease in write time is a serious problem.

BRIEF SUMMARY OF THE INVENTION

A nonvolatile semiconductor memory according to an aspect of the presentinvention comprises first and second select gate transistors, memorycells connected in series between the first and second select gatetransistors, a source line connected to the first select gatetransistor, a bit line connected to the second select gate transistor, aselected word line which is connected to a selected memory cell as atarget of a verify reading among the memory cells, a non-selected wordline which is connected to a non-selected memory cell except theselected memory cell among the memory cells, a potential generatingcircuit for generating a selected read potential which is supplied tothe selected word line, and generating a non-selected read potentiallarger than the selected read potential, which is supplied to thenon-selected word line, and a control circuit which classifies athreshold voltage of the selected memory cell to one of three groups byverifying which area among three area which are isolated by two valuesdoes a cell current of the selected memory cell belong, when theselected read potential is a first value.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a diagram showing a nonvolatile semiconductor memory.

FIG. 2 is a diagram showing one NAND block.

FIGS. 3 to 5 are diagrams, each showing a location of a memory cellarray, a word line driver and a data circuit.

FIGS. 6 and 7 are diagrams, each showing a distribution of thresholdvoltages of memory cells.

FIG. 8 is a diagram showing a conventional sense amplifier.

FIG. 9 is a diagram showing an operation waveform of the sense amplifierin FIG. 8.

FIG. 10 is a diagram showing a conventional sense amplifier.

FIG. 11 is a diagram showing an operation waveform of the senseamplifier in FIG. 10.

FIG. 12 is a diagram showing a potential relationship in a write mode.

FIGS. 13 and 14 are diagrams, each showing a principle of the presentinvention.

FIG. 15 is a diagram showing a sense amplifier of a first embodiment.

FIG. 16 is a diagram showing an operation waveform of the senseamplifier in FIG. 15.

FIG. 17 is a diagram showing a sense amplifier of a second embodiment.

FIG. 18 is a diagram showing an operation waveform of the senseamplifier in FIG. 17.

FIG. 19 is a diagram showing a sense amplifier of a first modificationexample.

FIG. 20 is a diagram showing an operation waveform of the senseamplifier in FIG. 19.

FIG. 21 is a diagram showing a sense amplifier of a second modificationexample.

FIG. 22 is a diagram showing an operation waveform of the senseamplifier in FIG. 21.

DETAILED DESCRIPTION OF THE INVENTION

A nonvolatile semiconductor memory of an aspect of the present inventionwill be described below in detail with reference to the accompanyingdrawing.

1. Outline

An example of the present invention is characterized by verifying threethreshold states of a selected memory cell as a target of writing by oneverify read in QPW (Quick Pass Write).

Specifically, a threshold voltage of the selected memory cell isclassified to one of three groups by verifying which area among threearea which are isolated by two values does a cell current of theselected memory cell belong, when the selected read potential is a firstvalue, when a selected read potential which is supplied to the selectedword line is constant.

A verification of the cell current of the selected memory cell isexecuted based on, for instance, a potential of the sense node at afirst point after a first term from a start point which a discharge ofthe sense node is started by the cell current, and a potential of thesense node at a second point after a second term longer than the firstterm from the start point.

According to an example of the present invention, the threshold voltageof the selected memory cell is classified to the three groups by oneverify reading. Therefore, a high speed of a write operation is realizedby shortening of a term of the verify reading in comparison with theconventional technique which the threshold voltage of the selectedmemory cell is classified by two verify readings.

2. Nonvolatile Semiconductor Memory

First, a nonvolatile semiconductor memory which serves as a premise ofthe present invention will be described using a NAND flash memory as anexample.

FIG. 1 shows a NAND flash memory. Memory cell array 11 has NAND blocksBK1, BK2, . . . BKn. Each of NAND blocks BK1, BK2, . . . BKn has NANDcell units.

Data circuit 12 has latch circuits (page buffers) which temporarilylatch page data upon reading/writing. I/O (Input/Output) buffer 13functions as an interface circuit for data, and address buffer 14functions as an interface circuit for address signals.

The address signals include a block address signal, a row addresssignal, and a column address signal.

Row decoder 15 selects one of blocks BK1, BK2, . . . BKn based on ablock address signal and selects one of word lines in the selected blockbased on a row address signal.

Word line driver 16 drives word lines in the selected block.

Column decoder 17 selects a predetermined number of latch circuits fromthe latch circuits based on a column address signal and connects theselected predetermined number of latch circuits to I/O buffer 13.

Verify circuit 18 verifies whether data is written properly uponwriting. Verify circuit 18 compares data read from a selected memorycell upon verify reading with written data to determine whether writinghas been completed.

Upon reading, potential generating circuit 19 generates a selected readpotential which is supplied to a selected word line, and generates anon-selected read potential larger than the selected read potential,which is supplied to a non-selected word line.

Control circuit 20 controls the operations of data circuit 12, I/Obuffer 13, address buffer 14, row decoder 15, word line driver 16,column decoder 17, verify circuit 18, and potential generating circuit19.

FIG. 2 shows one NAND block in a memory cell array.

NAND cell unit 21 includes source line side select gate transistor S01,bit line side select gate transistor S02, and i (i is a natural numbergreater than or equal to 2) memory cells MC00, MC01, MC02, . . .MC0(i-3), MC0(i-2), and MC0(i-1) which are connected in series betweensource line side select gate transistor S01 and bit line side selectgate transistor S02.

Two select gate lines SGS and SGD and i word lines WL0, WL1, WL2, . . .WL(i-3), WL(i-2), and WL(i-1) extend in a first direction. j (j is anatural number greater than or equal to 2) bit lines BL0, BL1, . . .BL(j-1) extend in a second direction orthogonal to the first direction.

Source line side select gate transistor S01 is connected to source lineCELSRC and bit line side select gate transistor S02 is connected to bitline BL0.

The memory cell array is disposed in well region CPWELL.

FIGS. 3 to 5 show a location relationship of a memory cell array, a wordline driver and a data circuit.

In FIG. 3, word line driver 16 is disposed at one end in a firstdirection of memory cell array 11, and data circuit (sense amplifier)12A, 12B are disposed at both ends in a second direction of memory cellarray 11.

In FIG. 4, word line driver 16A, 16B are disposed at both ends in afirst direction of memory cell array 11, and data circuit (senseamplifier) 12 is disposed at one end in a second direction of memorycell array 11.

In FIG. 5, word line driver 16A, 16B are disposed at both ends in afirst direction of memory cell array 11, and data circuit (senseamplifier) 12A, 12B are disposed at both ends in a second direction ofmemory cell array 11.

Layouts in FIGS. 3 to 5 are applied, for example, an all bit line (ABL)sensing system which read page data by simultaneous driving all bitlines in memory cell array 11.

The important point is that an example of the present invention ischaracterized in that a selected read potential applied a selected wordline is constant, and a threshold voltage of selected memory cell isclassified based on a cell current which flows the selected memory cell.

In other words, a sense amplifier in a data circuit needs to use acurrent detecting type.

The ABL sensing system is different from a conventional sensing system(a voltage detecting type) which bit lines in a memory cell arraycomprises selected bit lines and shielded bit lines. The ABL sensingsystem is the current detecting type.

3. Principle of Present Invention

The present invention is based on QPW.

According to the technique of the QPW, in order to narrow the width ofthreshold distribution of a memory cell in a written state, thethreshold voltage of the memory cell (selected memory cell) afterwritten is classified into one of three groups and a write condition atthe time of rewrite operation is varied based on this classification.

The three groups consist of a first group in which the threshold voltageof the selected memory cell is within a first threshold range A, asecond group in which the threshold voltage of the selected memory cellis within a second threshold range B higher than the first thresholdrange A, and a third group in which the threshold voltage of theselected memory cell is within a third threshold range C higher than thesecond threshold range B as shown in FIG. 6 (two values) and FIG. 7(four values).

The memory cell in the first group is a write-incomplete cell having athreshold voltage positioned far from the third threshold range as atarget of writing. The memory cell in the second group is awrite-incomplete cell (referred to as the QPW cell) having a thresholdvoltage positioned close to the third threshold group as the target ofwriting. Furthermore, the memory cell in the third group is awrite-complete cell in the third threshold range as the target ofwriting.

Thus, at the time of rewrite operation, for the write-incomplete cellclassified to the first group, a bit line is set to a first potentialand a usual write operation is performed, and for the QPW cellclassified to the second group, a bit line is set to a second potentialhigher than the first potential and a write operation weaker (thresholdshift width is smaller) than the usual write operation is performed.

In addition, for the write-complete cell classified to the third group,a bit line is set to a third potential higher than the second potentialand a write operation is inhibited.

Here, according to the conventional QPW, as shown in FIGS. 6 and 7, twoverify read operations are performed using two values (V1/VL1, V2/VL2and V3/VL3) as selected read potentials applied to the selected wordline.

In addition, a non-selected read potential Vread higher than theselected read potential is applied to a non-selected word line.

FIG. 8 shows a first example of a conventional sense amplifier appliedto the ABL sense method.

This sense amplifier SA is composed of clamp circuit 32, prechargecircuit 33, discrimination circuit (discriminator) 34, and latch circuit35.

Clamp circuit 32 includes N channel MOS transistors 36 and 37. Prechargecircuit 33 includes P channel MOS transistor 38. Discrimination circuit34 includes P channel MOS transistors 40 and 41, N channel MOStransistor 42, and capacitor 39.

Latch circuit 35 has flip-flop-connected two inverters, that is, Pchannel MOS transistors 43 and 44 and N channel MOS transistors 45 and46. P channel MOS transistor 47 and N channel MOS transistor 48 are usedto control activation/inactivation of latch circuit 35.

N channel MOS transistor 31 as a clamp circuit is connected betweensense amplifier SA and bit line BL. NAND cell unit 21 is connected tobit line BL. N channel MOS transistor 49 is used to discharge bit lineBL.

FIG. 9 shows an operation waveform of the sense amplifier shown in FIG.8.

A first verify read operation is performed from time t1 to t5, and asecond verify read operation is performed from time t6 to t10.

At the time of first verify read operation, XVL (VL1, for example) isapplied to a selected word line as a selected read potential, andnon-selected read potential Vread (5 to 7 V, for example) higher thanthe selected read potential is applied to a non-selected word line todiscriminate a write-incomplete cell (first group).

Sense node SEN is set to precharge potential Vpre previously. Whencontrol signal FLT is set to “H” under the condition that bit line BL isfixed to a constant potential (0.5 V, for example), the potential ofsense node SEN becomes as described below according to the thresholdvoltage of a selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, a cell current flows in the selectedmemory cell, and the potential of sense node SEN is lowered. Meanwhile,when the threshold voltage of the selected memory cell is higher thanthe selected read potential, the cell current does not flow in theselected memory cell and the potential of sense node SEN is not changed.

Therefore, when control signal STB is set to “L” after a certain periodof time has passed since control signal FLT is set to “H”, the potentialof sense node SEN is latched to the latch circuit.

For example, when the selected memory cell is the write-incomplete cell(first group), its threshold voltage is lower than the selected readpotential, so that the cell current flows in the selected memory cell,and the potential of sense node SEN is lowered. Therefore, input nodeINV of the latch circuit becomes “H” and output node LAT of the latchcircuit becomes “L”.

Then, N channel MOS transistor 36 is turned off, and sense node SEN isdisconnected from bit line BL (lockout operation). In addition, Nchannel MOS transistor 49 is turned on, and bit line BL is discharged.

In addition, when the selected memory cell is a

QPW cell (second group) or a write-complete cell (third group), itsthreshold voltage is higher than the selected read potential, so thatthe cell current does not flow in the selected memory cell, and thepotential of sense node SEN is not changed. Therefore, input node INV ofthe latch circuit is kept at “L”, and output node LAT of the latchcircuit becomes “H”.

Thus, the write-incomplete cell (first group) is discriminated by thefirst verify read operation.

At the time of second verify read operation, XV (V1, for example) isapplied to the selected word line as the selected read potential andread potential Vread higher than the selected read potential is appliedto the non-selected word line to discriminate the QPW cell (secondgroup) and the write-complete cell (third group).

When control signal FLT is set to “H” under the condition that bit lineBL is fixed to a constant potential (0.5 V, for example), the potentialof sense node SEN becomes as described below according to the thresholdvoltage of the selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, the cell current flows in the selectedmemory cell, and the potential of sense node SEN is lowered. Meanwhile,when the threshold voltage of the selected memory cell is higher thanthe selected read potential, the cell current does not flow in theselected memory cell, and the potential of sense node SEN is notchanged.

Therefore, when control signal STB is set to “L” after a certain periodof time has passed since control signal FLT is set to “H”, the potentialof sense node SEN is latched to the latch circuit.

For example, when the selected memory cell is the write-incomplete cell(first group) or the QPW cell (second group), its threshold voltage islower than the selected read potential, so that the cell current flowsin the selected memory cell, and the potential of sense node SEN islowered. Therefore, input node INV of the latch circuit becomes “H” andoutput node LAT of the latch circuit becomes “L”.

Then, N channel MOS transistor 36 is turned off, and sense node SEN isdisconnected from bit line BL (lockout operation). In addition, Nchannel MOS transistor 49 is turned on, and bit line BL is discharged.

In addition, when the selected memory cell is the write-complete cell(third group), its threshold voltage is higher than the selected readpotential, so that the cell current does not flow in the selected memorycell, and the potential of sense node SEN is not changed. Therefore,input node INV of the latch circuit is kept at “L”, and output node LATof the latch circuit becomes “H”.

Thus, the QPW cell (second group) and the write-complete cell (thirdgroup) are discriminated by the second verify read operation.

FIG. 10 shows a second example of a conventional sense amplifier appliedto the ABL sense method.

This sense amplifier SA is composed of clamp circuit 32, prechargecircuit 33, discrimination circuit (discriminator) 34, and latch circuit35.

Clamp circuit 32 includes N channel MOS transistors 36, 37, and 50.Precharge circuit 33 includes P channel MOS transistors 38 and 51.Discrimination circuit 34 includes P channel MOS transistors 40 and 41,N channel MOS transistor 42, and capacitor 39.

Latch circuit 35 has two flip-flop-connected inverters, that is, Pchannel MOS transistors 43 and 44 and N channel MOS transistors 45 and46. P channel MOS transistor 47 and N channel MOS transistor 48 are usedto control activation/inactivation of latch circuit 35.

N channel MOS transistor 31 as a clamp circuit is connected betweensense amplifier SA and bit line BL.

NAND cell unit 21 is connected to bit line BL. N channel MOS transistor49 is used to discharge bit line BL.

FIG. 11 shows an operation waveform of the sense amplifier shown in FIG.10.

A first verify read operation is performed from time t1 to t5, and asecond verify read operation is performed from time t6 to t10.

At the time of first verify read operation, XVL (VL1, for example) isapplied to a selected word line as a selected read potential, andnon-selected read potential Vread (5 to 7 V, for example) higher thanthe selected read potential is applied to a non-selected word line todiscriminate a write-incomplete cell (first group).

Sense node SEN is set to precharge potential Vpre previously. Whencontrol signal HHO is set to “L” and control signal VB is set to “H”under the condition that bit line BL is fixed to a constant potential(0.5 V, for example), the potential of sense node SEN is raised due tocapacity coupling.

Then, the potential of sense node SEN becomes as described belowaccording to the threshold voltage of a selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, the cell current flows in the selectedmemory cell, and the potential of sense node SEN is lowered. Meanwhile,when the threshold voltage of the selected memory cell is higher thanthe selected read potential, the cell current does not flow in theselected memory cell, and the potential of sense node SEN is notchanged.

Therefore, when control signal XXO is set to “L” and then control signalSTB is set to “L” after a certain period of time has passed sincecontrol signal HHO is set to “L”, the potential of sense node SEN islatched to the latch circuit.

For example, when the selected memory cell is the write-incomplete cell(first group), its threshold voltage is lower than the selected readpotential, so that the cell current flows in the selected memory cell,and the potential of sense node SEN is lowered. Therefore, input nodeINV of the latch circuit becomes “H” and output node LAT of the latchcircuit becomes “L”.

In addition, when the selected memory cell is a QPW cell (second group)or a write-complete cell (third group), its threshold voltage is higherthan the selected read potential, so that the cell current does not flowin the selected memory cell, and the potential of sense node SEN is notchanged. Therefore, input node INV of the latch circuit is kept at “L”,and output node LAT of the latch circuit becomes “H”.

Thus, the write-incomplete cell (first group) is discriminated by thefirst verify read operation.

At the time of second verify read operation, XV (V1, for example) isapplied to the selected word line as the selected read potential andnon-selected read potential Vread higher than the selected readpotential is applied to the non-selected word line to discriminate theQPW cell (second group) and the write-complete cell (third group).

When control signal HHO is set to “L” and control signal VB is set to“H” under the condition that bit line BL is fixed to a constantpotential (0.5 V, for example), the potential of sense node SEN israised due to capacity coupling.

Then, the potential of sense node SEN becomes as described belowaccording to the threshold voltage of the selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, the cell current flows in the selectedmemory cell, and the potential of sense node SEN is lowered. Meanwhile,when the threshold voltage of the selected memory cell is higher thanthe selected read potential, the cell current does not flow in theselected memory cell, and the potential of sense node SEN is notchanged.

Therefore, when control signal XXO is set to “L” and control signal STBis set to “L” after a certain period of time has passed since controlsignal HHO is set to “L”, the potential of sense node SEN is latched tothe latch circuit.

For example, when the selected memory cell is the write-incomplete cell(first group) or the QPW cell (second group), its threshold voltage islower than the selected read potential, so that the cell current flowsin the selected memory cell, and the potential of sense node SEN islowered. Therefore, input node INV of the latch circuit becomes “H” andoutput node LAT of the latch circuit becomes “L”.

In addition, when the selected memory cell is the write-complete cell(third group), its threshold voltage is higher than the selected readpotential, so that the cell current does not flow in the selected memorycell, and the potential of sense node SEN is not changed. Therefore,input node INV of the latch circuit is kept at “L”, and output node LATof the latch circuit becomes “H”.

Thus, the QPW cell (second group) and the write-complete cell (thirdgroup) are discriminated by the second verify read operation.

FIG. 12 shows a potential relationship at the time of write operationafter the verify read operation.

When the threshold voltage of the selected memory cell is classified tothe first group (write-incomplete cell) at the time of write operationafter the verify read operation, bit line BL is set to a first potential(ground potential Vss, for example), and then write potential Vpgm isapplied to the selected word line.

In this case, the first potential is transmitted from bit line BL to achannel of the selected memory cell first. In addition, even when writepotential Vpgm is applied to the selected word line, a bit line-sideselect gate transistor is on, and the channel is fixed to the firstpotential.

Therefore, a high voltage is applied between the selected word line andthe channel (inversion layer of semiconductor substrate) in the selectedmemory cell, and the usual write operation is performed.

In addition, when the threshold voltage of the selected memory cell isclassified to the second group (QPW cell), bit line BL is set to asecond potential (Vb1, for example) higher than the first potential, andthen write potential Vpgm is applied to the selected word line.

In this case, the second potential is transmitted from bit line BL tothe channel of the selected memory cell first. In addition, even whenwrite potential Vpgm is applied to the selected word line, a bitline-side select gate transistor is on, and the channel is fixed to thesecond potential.

Therefore, a voltage lower than that of the usual write operation isapplied between the selected word line and the channel (inversion layerof semiconductor substrate) in the selected memory cell, and a writeoperation weaker (threshold shift width is smaller) than the usual writeoperation is performed.

Furthermore, when the threshold voltage of the selected memory cell isclassified to the third group (write-complete cell), bit line BL is setto a third potential (Vinhibit, for example) higher than the secondpotential, and then write potential Vpgm is applied to the selected wordline.

In this case, the third potential is transmitted from bit line BL to thechannel of the selected memory cell first. In addition, as the potentialof the selected word line is raised, the channel becomes a little higherthan the third potential, and the bit line-side select gate transistoris cut off. Therefore, when the selected word line reaches writepotential Vpgm, the channel reaches Vinhibit+α (α is a potentialvariation due to capacity coupling).

Therefore, a high voltage required for the write operation is notapplied between the selected word line and the channel (inversion layerof semiconductor substrate) in the selected memory cell, so that thewrite operation is inhibited.

FIGS. 13 and 14 show the principle of a verify read operation accordingto the example of the present invention. FIG. 13 corresponds to FIG. 6,and FIG. 14 corresponds to FIG. 7.

According to the example of the present invention, when QPW is executed,the threshold state of a selected memory cell as a target of writing isclassified to one of three groups by one verify read operation.

More specifically, under the condition that a selected read potentialapplied to a selected word line is set to a constant value (V1, forexample), the threshold voltage of the selected memory cell isclassified to one of the first to third groups shown in FIGS. 6 and 7 byverifying to which one of three areas (area 1/area 2/area 3) divided bytwo values X and Y cell current Icell flowing in the selected memorycell belongs.

For example, when the selected read potential is V1, a cell currentflowing in the memory cell in the first group (write-incomplete cell) isIcell1, and a cell current flowing in the memory cell in the secondgroup (QPW cell) is Icell2, and the cell current flowing in the memorycell in the third group (write-complete cell) is Icell3.

Here, it is to be noted that Icell1>Icell2>Icell3.

According to the conventional QPW, the two values are used as theselected read potential, and it is detected whether the cell currentflows in the selected memory cell or not with respect to each value. Inother words, according to the conventional QPW, the two verify readoperations are needed because it is detected whether the cell currentflows or not.

Meanwhile, according to the example of the present invention, thethreshold voltage of the selected memory cell is classified to one ofthree groups through the one verify read operation, not by verifyingwhether the cell current flows or not, but by verifying the magnitude ofthe current cell.

The magnitude of the cell current flowing in the selected memory cell isverified, for example, based on the potential of a sense node at a firstpoint after a first period has passed since a discharge start time tostart discharge from the sense node by the cell current flowing in theselected memory cell, and the potential of the sense node at a secondpoint after a second period longer than the first period has passedsince the discharge start time, under the condition that the sense nodehas been charged previously.

According to the example in the present invention, since the thresholdvoltage of the selected memory cell can be classified by the one verifyread operation, a setup period to change the potential of the selectedword line, and a recovery period of the bit line after the lockoutoperation are not needed unlike the case where the threshold voltage ofthe selected memory cell is classified through the two verify readoperations.

Therefore, a write operation can be performed at high speed because averify read time is shortened.

4. Embodiments

(1) First Embodiment

FIG. 15 shows a sense amplifier according to a first embodiment.

This sense amplifier SA is applied to the ABL sense method and this isan improved example of the conventional sense amplifier shown in FIG. 8.

Sense amplifier SA is composed of clamp circuit 32, precharge circuit33, discrimination circuit (discriminator) 34, and latch circuits 35Aand 35B.

Clamp circuit 32 includes N channel MOS transistors 36 and 37. Prechargecircuit 33 includes P channel MOS transistor 38. Discrimination circuit34 includes P channel MOS transistors 40 and 41, N channel MOStransistors 42 and 53, and capacitor 39.

Latch circuit 35A has flip-flop-connected two inverters, that is, Pchannel MOS transistors 43A and 44A and N channel MOS transistors 45Aand 46A. P channel MOS transistor 47A and N channel MOS transistor 48Aare used to control activation/inactivation of latch circuit 35A.

The potential of sense node SEN is latched to latch circuit 35A throughN channel MOS transistor 52. The data latched to latch circuit 35A isnot used for a lockout operation which forces sense node SEN to bedisconnected from the bit line.

Latch circuit 35B has flip-flop-connected two inverters, that is, Pchannel MOS transistors 43B and 44B and N channel MOS transistors 45Band 46B. P channel MOS transistor 47B and N channel MOS transistor 48Bare used to control activation/inactivation of latch circuit 35B.

The potential of sense node SEN is latched to latch circuit 35B throughN channel MOS transistor 53. The data latched to latch circuit 35B isused for the lockout operation to forcedly disconnect sense node SENfrom the bit line.

N channel MOS transistor 31 as a clamp circuit is connected betweensense amplifier SA and bit line BL. NAND cell unit 21 is connected tobit line BL. N channel MOS transistor 49 is used for discharging bitline BL. N channel MOS transistor 49 is turned on/off based on the datalatched to latch circuit 35B.

FIG. 16 shows an operation waveform of the sense amplifier shown in FIG.15.

First, XV (V1, for example) is applied to a selected word line as aselected read potential, and non-selected read potential Vread (5 to 7V, for example) higher than the selected read potential is applied to anon-selected word line.

When control signal FLT is set to “H” under the condition that sensenode SEN is charged to precharge potential Vpre and bit line BL is fixedto a constant potential (0.5 V, for example), the potential of sensenode SEN becomes as described below according to the threshold voltageof the selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of sense nodeSEN is lowered is increased. Meanwhile, when the threshold voltage ofthe selected memory cell is higher than the selected read potential, asmall cell current flows in the selected memory cell or the cell currentdoes not flow in the selected memory cell, so that the speed at whichthe potential of sense node SEN is lowered is decreased.

Thus, control signal LSA is set to “H” and N channel MOS transistor 52shown in FIG. 15 is turned on first. Then, when control signal STB isset to “L” at first point t4 after a first period has passed sincedischarge start time t3 to start discharge from sense node SEN, that is,after the first period has passed since control signal FLT is set to“H”, the potential of sense node SEN is latched to latch circuit 35Ashown in FIG. 15.

For example, when the selected memory cell is a write-incomplete cell(first group), its threshold voltage is lower than the selected readpotential and a difference between them is large, so that a large cellcurrent flows in the selected memory cell. Thus, the potential of sensenode SEN is lowered rapidly, and a potential drop amount reaches dVbefore time t4, at which sense node SEN becomes “L”.

Therefore, input node INVA of latch circuit 35A becomes “H” and outputnode LATA of latch circuit 35A becomes “L”. Here, it is to be noted thatat this time, the lockout operation to forcedly disconnect sense nodeSEN from bit line BL to discharge bit line BL is not performed.

When the selected memory cell is a QPW cell (second group), itsthreshold voltage is lower than the selected read potential and adifference between them is small, so that a small cell current flows inthe selected memory cell. Thus, the potential of sense node SEN islowered moderately, and a potential drop amount does not reach dV beforetime t4, at which sense node SEN is kept at “H”.

Therefore, input node INVA of latch circuit 35A becomes “L”, and outputnode LATA of latch circuit 35A becomes “H”.

Meanwhile, when the selected memory cell is a write-complete cell (thirdgroup), its threshold voltage is higher than the selected readpotential, so that a very small cell current flows in the selectedmemory cell, or the cell current does not flow in the selected memorycell. Thus, the potential of sense node SEN is lowered moderately, and apotential drop amount does not reach dV before time t4, at which sensenode SEN is kept at “H”.

Therefore, input node INVA of latch circuit 35A becomes “L”, and outputnode LATA of latch circuit 35A becomes “H”.

As described above, the write-incomplete cell (first group) isdiscriminated.

Then, control signal LSA is set to “L” and N channel MOS transistor 52shown in FIG. 15 is turned off.

Then, control signal LSB is set to “H” and N channel MOS transistor 53shown in FIG. 15 is turned on. In addition, when control signal STB isset to “L” at second point t7 after a second period longer than thefirst period has passed since discharge start time t3 to start dischargefrom sense node SEN, that is, after the second period has passed sincecontrol signal FLT is set to “H”, the potential of sense node SEN islatched to latch circuit 35B shown in FIG. 15.

For example, when the selected memory cell is the write-incomplete cell(first group), the potential of sense node SEN is lowered rapidly, sothat a potential drop amount reaches dV before time t4, and sense nodeSEN is at “L” at time t7.

Therefore, input node INVB of latch circuit 35B becomes “H” and outputnode LATB of latch circuit 35B becomes “L”.

Then, N channel MOS transistor 36 is turned off and sense node SEN isdisconnected from bit line BL (lockout operation). In addition, Nchannel MOS transistor 49 is turned on and bit line BL is discharged.

When the selected memory cell is the QPW cell (second group), itsthreshold voltage is lower than the selected read potential and adifference between them is small, so that the cell current flowing inthe selected memory cell is small. Thus, the potential of sense node SENis lowered moderately, and a potential drop amount reaches dV beforetime t7, at which sense node SEN is at “L”.

Therefore, input node INVB of latch circuit 35B becomes “H”, and outputnode LATB of latch circuit 35B becomes “L”.

Then, N channel MOS transistor 36 is turned off, and sense node SEN isdisconnected from bit line BL (lockout operation). In addition, Nchannel MOS transistor 49 is turned on, and bit line BL is discharged.

Meanwhile, when the selected memory cell is the write-complete cell(third group), its threshold voltage is higher than the selected readpotential, so that a very small cell current flows in the selectedmemory cell, or the cell current does not flow in the selected memorycell. Thus, the potential of sense node SEN is lowered moderately, and apotential drop amount does not reach dV before time t7, at which sensenode SEN is still at “H”.

Therefore, input node INVB of latch circuit 35B becomes “L”, and outputnode LATB of latch circuit 35B becomes “H”.

As described above, the QPW cell (second group) and the write-completecell (third group) are discriminated.

Table 1 shows relationship between data INVA and INVB latched to the twolatch circuits and the three groups.

TABLE 1 INVA INVB Group H H First group (Area 1) L H Second group (Area2) L L Third group (Area 3)

When both INVA and INVB are at “H”, it is verified that the selectedmemory cell belongs to the first group (area 1 in FIGS. 13 and 14) andis recognized as the write-incomplete cell.

When INVA is at “L” and INVB is at “H”, it is verified that the selectedmemory cell belongs to the second group (area 2 in FIGS. 13 and 14) andis recognized as the QPW cell.

When both INVA and INVB are at “L”, it is verified that the selectedmemory cell belongs to the third group (area 3 in FIGS. 13 and 14) andis recognized as the write-incomplete cell.

As described above, according to the first embodiment, the thresholdvoltage of the selected memory cell can be classified to one of thethree groups through one verify read operation by use of the differencein magnitude of the sense current flowing in the selected memory cell.

Therefore, as is obvious from the waveform diagram in FIG. 16, since asetup period to change the potential of the selected word line, and arecovery period of the bit line after the lockout operation are notneeded, a write operation can be performed at high speed due to theshortened verify read time.

(2) Second Embodiment

FIG. 17 shows a sense amplifier according to a second embodiment.

This sense amplifier SA is applied to the ABL sense method and this isan improved example of the conventional sense amplifier shown in FIG.10.

Sense amplifier SA is composed of clamp circuit 32, precharge circuit33, discrimination circuit (discriminator) 34, and latch circuits 35Aand 35B.

Clamp circuit 32 includes N channel MOS transistors 36, 37, and 50.Precharge circuit 33 includes P channel MOS transistors 38 and 51.Discrimination circuit 34 includes P channel MOS transistors 40 and 41,N channel MOS transistors 42, 52, and 53, and capacitor 39.

Latch circuit 35A has flip-flop-connected two inverters, that is, Pchannel MOS transistors 43A and 44A and N channel MOS transistors 45Aand 46A. P channel MOS transistor 47A and N channel MOS transistor 48Aare used to control activation/inactivation of latch circuit 35A.

The potential of sense node SEN is latched to latch circuit 35A throughN channel MOS transistor 52.

Latch circuit 35B has flip-flop-connected two inverters, that is, Pchannel MOS transistors 43B and 44B and N channel MOS transistors 45Band 46B. P channel MOS transistor 47B and N channel MOS transistor 48Bare used to control activation/inactivation of latch circuit 35B.

The potential of sense node SEN is latched to latch circuit 35B throughN channel MOS transistor 53.

N channel MOS transistor 31 as a clamp circuit is connected betweensense amplifier SA and bit line BL. NAND cell unit 21 is connected tobit line BL. N channel MOS transistor 49 is used for discharging bitline BL. N channel MOS transistor 49 is turned on/off based on the datalatched to latch circuit 35B.

FIG. 18 shows an operation waveform of the sense amplifier shown in FIG.17.

First, XV (V1, for example) is applied to a selected word line as aselected read potential, and non-selected read potential Vread (5 to 7V, for example) higher than the selected read potential is applied to anon-selected word line.

When control signal HHO is set to “L” and control signal VB is set to“H” under the condition that sense node SEN is charged to prechargepotential Vpre and bit line BL is fixed to a constant potential (0.5 V,for example), the potential of sense node SEN is raised due to capacitycoupling.

Then, the potential of sense node SEN becomes as described belowaccording to the threshold voltage of the selected memory cell.

That is, when the threshold voltage of a selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of the sensenode SEN is lowered is increased. Meanwhile, when the threshold voltageof the selected memory cell is higher than the selected read potential,a small cell current flows in the selected memory cell, or the cellcurrent does not flow in the selected memory cell, so that the speed atwhich the potential of sense node SEN is lowered is decreased.

Therefore, control signal LSA is set to “H” and N channel MOS transistor52 shown in FIG. 15 is turned on. In addition, when control signal STBis set to “L” at first point t4 after a first period has passed sincedischarge start time t3 to start discharge from sense node SEN, thepotential of sense node SEN is latched to latch circuit 35A shown inFIG. 15.

For example, when the selected memory cell is a write-incomplete cell(first group), its threshold voltage is lower than the selected readpotential and a difference between them is large, so that the large cellcurrent flows in the selected memory cell. Thus, the potential of thesense node SEN is lowered rapidly, and a potential drop amount reachesdV before time t4.

Here, before control signal STB is set to “L”, control signal VB is setto “L” at time t4′ to lower the potential of sense node SEN by capacitycoupling, so that P channel MOS transistor 41 can detect the potentialchange of sense node SEN.

Thus, the level of sense node SEN becomes “L” at time t4.

Therefore, P channel MOS transistor 41 is turned on, and input node INVAof latch circuit 35A becomes “H” and output node LATA of latch circuit35A becomes

Meanwhile, when the selected memory cell is a QPW cell (second group),its threshold voltage is lower than the selected read potential and adifference between them is small, so that a small cell current flows inthe selected memory cell. Thus, the potential of sense node SEN islowered moderately, and a potential drop amount does not reach dV beforetime t4.

Consequently, even when control signal VB is set to “L” at time t4′, andthe potential of sense node SEN is lowered by capacity coupling, thelevel of the sense node SEN is kept at “H” at time t4.

Therefore, P channel MOS transistor 41 is turned off, and input nodeINVA of latch circuit 35A becomes

“L”, and output node LATA of latch circuit 35A becomes “H”.

Meanwhile, when the selected memory cell is a write-complete cell (thirdgroup), its threshold voltage is higher than the selected readpotential, so that a very small cell current flows in the selectedmemory cell, or the cell current does not flow in the selected memorycell. Thus, the potential of sense node SEN is lowered moderately, and apotential drop amount does not reach dV before time t4.

Consequently, even when control signal VB is set to “L” at time t4′, andthe potential of sense node SEN is lowered by capacity coupling, thelevel of sense node SEN is kept at “H” at time t4.

Thus, P channel MOS transistor 41 is turned off, and input node INVA oflatch circuit 35A becomes “L”, and output node LATA of latch circuit 35Abecomes “H”.

As described above, the write-incomplete cell (first group) isdiscriminated first.

Then, control signal LSA is set to “L” and N channel MOS transistor 52shown in FIG. 15 is turned off.

Then, control signal LSB is set to “H” and N channel MOS transistor 53shown in FIG. 15 is turned on. In addition, when control signal STB isset to “L” at second point t7 after a second period longer than thefirst period has passed since discharge start time t3 to start dischargefrom sense node SEN, the potential of sense node SEN is latched to latchcircuit 35B shown in FIG. 15.

For example, when the selected memory cell is the write-incomplete cell(first group), the potential of sense node SEN is lowered rapidly, andthe potential drop amount reaches dV before time t4, so that sense nodeSEN is still at “L” at time t7 after control signal VB is set to “H” attime t6 and control signal VB is set to “L” at time t7′.

Thus, P channel MOS transistor 41 is turned on, and input node INVB oflatch circuit 35B becomes “H” and output node LATB of latch circuit 35Bbecomes “L”. Then, N channel MOS transistor 49 is turned on and bit lineBL is discharged.

When the selected memory cell is the QPW cell (second group), itsthreshold voltage is lower than the selected read potential and adifference between them is small, so that a small cell current flows inthe selected memory cell. Thus, the potential of sense node SEN islowered moderately, and a potential drop amount reaches dV before timet7.

Thus, control signal VB is set to “H” at time t6, and control signal VBis set to “L” at time t7′, after which sense node SEN becomes “L” attime t7.

Thus, P channel MOS transistor 41 is turned on, and input node INVB oflatch circuit 35B becomes “H”, and output node LATB of latch circuit 35Bbecomes “L”. Then, N channel MOS transistor 49 is turned on, and bitline BL is discharged.

Meanwhile, when the selected memory cell is the write-complete cell(third group), its threshold voltage is higher than the selected readpotential, so that a very small cell current flows in the selectedmemory cell, or the cell current does not flow in the selected memorycell. Thus, the potential of sense node SEN is lowered very moderately,and a potential drop amount does not reach dV before time t7.

Consequently, after control signal VB is set to “H” at time t6, andcontrol signal VB is set to “L” at time t7′, the level of sense node SENis still at “H” at time t7.

Thus, P channel MOS transistor 41 is turned off, and input node INVB oflatch circuit 35B becomes “L”, and output node LATB of latch circuit 35Bbecomes “H”.

As described above, the QPW cell (second group) and the write-completecell (third group) are discriminated.

In addition, the relationship between data INVA and INVB latched to thetwo latch circuits and the three groups is as shown in Table 1 similarto the first embodiment.

As described above, according to the second embodiment, the thresholdvoltage of the selected memory cell can be classified to one of thethree groups through one verify read operation by use of the differencein magnitude of the sense current flowing in the selected memory cell.

Therefore, as is obvious from the waveform diagram in FIG. 18, since asetup period to change the potential of the selected word line, and arecovery period of the bit line after the lockout operation are notneeded, a write operation can be performed at high speed due to theshortened verify read time.

(3) Others

A write operation after the verify read operation is similar to theconventional QPW as shown in FIG. 12.

When the threshold voltage of a selected memory cell is classified to afirst group (write-incomplete cell), bit line BL is set to a firstpotential (ground potential Vss, for example), and then write potentialVpgm is applied to a selected word line. The usual write operation isperformed for the selected memory cell.

Meanwhile, when the threshold voltage of the selected memory cell isclassified to a second group (QPW cell), bit line BL is set to a secondpotential (Vb1, for example) higher than the first potential, and thenwrite potential Vpgm is applied to the selected word line. A writeoperation weaker (threshold shift width is smaller) than usual writeoperation is performed for the selected memory cell.

Furthermore, when the threshold voltage of the selected memory cell isclassified to a third group (write-complete cell), bit line BL is set toa third potential (Vinhibit, for example) higher than the secondpotential, and then write potential Vpgm is applied to the selected wordline. The write operation is inhibited in the selected memory cell.

5. Modification Examples

According to the first and second embodiments, the selected memory cellis classified to one of the three groups by varying the potential of theone sense node according to the magnitude of the cell current anddifferentiating the detection time of the potential of the sense nodeunder the condition that the selected read potential is kept at aconstant value.

Meanwhile, according to modification examples, the threshold voltage ofthe selected memory cell is classified to one of the three groups byproviding two sense nodes having different precharge potentials, andvarying the potentials of the two sense nodes separately according tothe magnitude of the cell current.

(1) First Modification Example

FIG. 19 shows a sense amplifier according to a first modificationexample.

The first modification example is a modification example of the firstembodiment.

The first modification example differs from the first embodiment only inthe configuration of discrimination circuit 34. Since the rest are thesame as those in the first embodiment, a description will be made ofdiscrimination circuit 34 only here.

Discrimination circuit 34 includes P channel MOS transistors 40A, 40B,41A, 41B, and N channel MOS transistors 42A, 42B, 54A, and 54B, andcapacitors 39A and 39B.

More specifically, discrimination circuit 34 has two sense nodes SENAand SENB.

Sense node SENA is connected to bit line BL through the N channel MOStransistor 54A, and sense node SENB is connected to bit line BL throughN channel MOS transistor 54B.

Since there are two sense nodes, N channel MOS transistors 54A and 54Bare needed while N channel MOS transistors 52 and 53 in FIG. 15 are notneeded.

In addition, capacities of capacitors 39A and 39B are differentiated todifferentiate the precharge potentials of two sense nodes SENA and SENB.

FIG. 20 shows an operation waveform of the sense amplifier shown in FIG.19.

First, XV (V1, for example) is applied to a selected word line as aselected read potential, and non-selected read potential Vread (5 to 7V, for example) higher than the selected read potential to anon-selected word line.

In addition, sense node SENA is charged to precharge potential Vpre1,and sense node SENB is charged to precharge potential Vpre21. Here, itis to be noted that Vpre1>Vpre2.

Thus, when control signal FLT is set to “H” and selected signal SSA isset to “H” under the condition that bit line BL is fixed to a constantpotential (0.5 V, for example), the potential of sense node SENA becomesas described below according to the threshold voltage of the selectedmemory cell.

That is, when the threshold voltage of a selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of sense nodeSENA is lowered is increased. Meanwhile, when the threshold voltage ofthe selected memory cell is higher than the selected read potential, asmall cell current flows in the selected memory cell, or the cellcurrent does not flow in the selected memory cell, so that the speed atwhich the potential of sense node SENA is lowered is decreased.

More specifically, when selected signal SSA becomes “H”, N channel MOStransistor 54A shown in FIG. 19 is turned on. In addition, when controlsignal STB is set to “L” at first point t4 after a first period haspassed since discharge start time t3 to start discharge from sense nodeSENA, the potential of sense node SENA is latched to latch circuit 35Ashown in FIG. 19.

More specifically, when the selected memory cell is a write-incompletecell (first group), a potential drop amount reaches dV1 which is lowerthan the threshold voltage of P channel MOS transistor 41A shown in FIG.19 at first point t4, and sense node SENA becomes “L”. As a result, Pchannel MOS transistor 41A is turned on, and INVA becomes “H” and LATAbecomes “L”.

Meanwhile, when the selected memory cell is a QPW cell (second group) ora write-complete cell (third group), a potential drop amount does notreach dV1 at first point t4, and sense node SENA is at “H”. As a result,P channel MOS transistor 41A is turned off, and INVA becomes “L” andLATA becomes “H”.

Thus, the write-incomplete cell (first group) is discriminated first.

Then, selected signal SSA is set to “L”, and N channel MOS transistor54A shown in FIG. 19 is turned off.

Next, when selected signal SSA is set to “H”, the potential of sensenode SENB becomes as described below according to the threshold voltageof the selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of sense nodeSENB is lowered is increased. Meanwhile, when the threshold voltage ofthe selected memory cell is higher than the selected read potential, asmall cell current flows in the selected memory cell, or the cellcurrent does not flow in the selected memory cell, so that the speed atwhich the potential of sense node SENB is lowered is decreased.

More specifically, when selected signal SSB becomes “H”, N channel MOStransistor 54B shown in FIG. 19 is turned on. In addition, when controlsignal STB is set to “L” at second point t7 after a second period haspassed since discharge start time t6 to start discharge from sense nodeSENB, the potential of sense node SENB is latched to latch circuit 35Bshown in FIG. 19.

Here, precharge potential Vpre2 of sense node SENB is lower thanprecharge potential Vpre1 of sense node SENA.

Therefore, for example, when the selected memory cell is thewrite-incomplete cell (first group) or the QPW cell (second group), apotential drop amount reaches dV2 which is lower than the thresholdvoltage of P channel MOS transistor 41B shown in FIG. 19 at second pointt7, and sense node SENB becomes “L”. As a result, P channel MOStransistor 41B is turned on, and INVA becomes “H” and LATA becomes “L”.

In addition, when the selected memory cell is the write-complete cell(third group), a potential drop amount does not reach dV2 at secondpoint t7, and sense node SENB is at “H”. As a result, P channel MOStransistor 41B is turned off, and INVA becomes “L” and LATA becomes “H”.

Thus, the QPW cell (second group) and write-complete cell (third group)are discriminated.

In addition, it is preferable that the first period and the secondperiod are equal.

According to the first modification example, the threshold voltage ofthe selected memory cell is classified to one of the three groups byproviding the two sense nodes having the different precharge potentials,and varying the potentials of the two sense nodes according to themagnitude of the cell current individually.

Therefore, according to the first modification example, similar to thefirst embodiment, a setup period to vary the potential of the selectedword line and a recovery period of the bit line after the lockoutoperation are not needed, so that a write operation can be performed athigh speed due to the shortened verify read time.

(2) Second Modification Example

FIG. 21 shows a sense amplifier according to a second modificationexample.

The second modification example is a modification example of the secondembodiment.

The second modification example differs from the second embodiment onlyin the configuration of discrimination circuit 34. Since the rest arethe same as those in the second embodiment, a description will be madeof discrimination circuit 34 only here.

Discrimination circuit 34 includes P channel MOS transistors 40A, 40B,41A, 41B, and N channel MOS transistors 42A, 42B, 54A, and 54B, andcapacitors 39A and 39B.

More specifically, discrimination circuit 34 has two sense nodes SENAand SENB.

Sense node SENA is connected to bit line BL through N channel MOStransistor 54A, and sense node SENB is connected to bit line BL throughN channel MOS transistor 54B.

Since there are two sense nodes, N channel MOS transistors 54A and 54Bare needed while N channel MOS transistors 52 and 53 in FIG. 17 are notneeded.

In addition, capacities of capacitors 39A and 39B are differentiated todifferentiate the precharge potentials of two sense nodes SENA and SENB.

Furthermore, control signal VBA is applied to one end of capacitor 39A,and control signal VBB is applied to one end of capacitor 39B.

FIG. 22 shows an operation waveform of the sense amplifier shown in FIG.21.

First, XV (V1, for example) is applied to a selected word line as aselected read potential, and non-selected read potential Vread (5 to 7V, for example) higher than the selected read potential is applied to anon-selected word line.

In addition, sense node SENA is charged to precharge potential Vpre1,and sense node SENB is charged to precharge potential Vpre2. Here, it isto be noted that Vpre1>Vpre2.

Thus, when control signal HHL is set to “L” and control signal VB is setto “H” under the condition that bit line BL is fixed to a constantpotential (0.5 V, for example), the potentials of the two sense nodesSENA and SENB are raised due to capacity coupling.

Thus, when selected signal SSA is set to “H”, the potential of sensenode SENA becomes as described below according to the threshold voltageof the selected memory cell.

That is, when the threshold voltage of a selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of sense nodeSENA is lowered is increased. Meanwhile, when the threshold voltage ofthe selected memory cell is higher than the selected read potential, asmall cell current flows in the selected memory cell, or the cellcurrent does not flow in the selected memory cell, so that the speed atwhich the potential of sense node SENA is lowered is decreased.

More specifically, when selected signal SSA becomes “H”, N channel MOStransistor 54A shown in FIG. 21 is turned on. In addition, when controlsignal STB is set to “L” at first point t4 after a first period haspassed since discharge start time t3 to start discharge from sense nodeSENA, the potential of sense node SENA is latched to latch circuit 35Ashown in FIG. 21.

More specifically, when the selected memory cell is a write-incompletecell (first group), control signal VBA is set to “H” at time t3, andcontrol signal VBA is set to “L” at time t4′, and a potential dropamount reaches dV1 which is lower than the threshold voltage of Pchannel MOS transistor 41A shown in FIG. 21 at first point t4.

Therefore, sense node SENA becomes “L”. As a result, P channel MOStransistor 41A is turned on, and INVA becomes “H” and LATA becomes “L”.

In addition, when the selected memory cell is a QPW cell (second group)or a write-complete cell (third group), control signal VBA is set to “H”at time t3, control signal VBA is set to “L” at time t4′, and then apotential drop amount does not reach dV1 at first point t4.

Therefore, sense node SENA becomes “H”. As a result, P channel MOStransistor 41A is turned off, and INVA becomes “L” and LATA becomes “H”.

Thus, the write-incomplete cell (first group) is discriminated first.

Thereafter, selected signal SSA is set to “L”, and N channel MOStransistor 54A in FIG. 21 is turned off.

Then, when selected signal SSB is set to “H”, the potential of sensenode SENB becomes as described below according to the threshold voltageof the selected memory cell.

That is, when the threshold voltage of the selected memory cell is lowerthan the selected read potential, a large cell current flows in theselected memory cell, and the speed at which the potential of sense nodeSENB is lowered is increased. Meanwhile, when the threshold voltage ofthe selected memory cell is higher than the selected read potential, asmall cell current flows in the selected memory cell, or the cellcurrent does not flow in the selected memory cell, so that the speed atwhich the potential of sense node SENB is lowered is decreased.

More specifically, when selected signal SSB becomes “H”, N channel MOStransistor 54B shown in FIG. 21 is turned on. In addition, when controlsignal STB is set to “L” at second point t7 after a second period haspassed since discharge start time t6 to start discharge from sense nodeSENB, the potential of sense node SENB is latched to latch circuit 35Bshown in FIG. 21.

Here, precharge potential Vpre2 of sense node SENB is lower thanprecharge potential Vpre1 of sense node SENA.

Therefore, for example, when the selected memory cell is thewrite-incomplete cell (first group) or the QPW cell (second group),control signal VBB is set to “H” at time t6, and control signal VBB isset to “L” at time t7′, and a potential drop amount reaches dV2 which islower than the threshold voltage of P channel MOS transistor 41B shownin FIG. 21 at second point t7.

Thus, sense node SENB becomes “L”. As a result, P channel MOS transistor41B is turned on, and INVA becomes “H” and LATA becomes “L”.

In addition, when the selected memory cell is the write-complete cell(third group), control signal VBB is set to “H” at time t6, controlsignal VBB is set to “L” at time t7′, and a potential drop amount doesnot reach dV2 at second point t7.

Thus, sense node SENB becomes “H”. As a result, P channel MOS transistor41B is turned off, and INVA becomes “L” and LATA becomes “H”.

Thus, the QPW cell (second group) and write-complete cell (third group)are discriminated.

In addition, it is preferable that the first period and the secondperiod are equal.

According to the second modification example, the threshold voltage ofthe selected memory cell is classified to one of the three groups byproviding the two sense nodes having the different precharge potentials,and varying the potentials of the two sense nodes according to themagnitude of the cell current individually.

Therefore, according to the second modification example, similar to thesecond embodiment, a setup period to vary the potential of the selectedword line and a recovery period of the bit line after the lockoutoperation are not needed and a write operation can be performed at highspeed due to the shortened verify read time.

6. Application Examples

The example of the present invention is effectively applied to amulti-level NAND flash memory.

FIGS. 7 and 14 show a case of four values.

The lowest state of the threshold voltages of the memory cell is anerased state (“0”-state), and there are three written states (“1”-state,“2”-state, and “3”-state).

The highest state of the threshold voltage of the memory cell is“3”-state, and the threshold voltage of the memory cell in “2”-state islower than the threshold voltage of the memory cell in “3”-state, andthreshold voltage of the memory cell in “1”-state is lower than thethreshold voltage of the memory cell in “2”-state.

The initial state of the memory cell is the erased state.

At the time of “1”-write, a selected read potential used in the verifyread operation is V1, and at the time of “2”-write, a selected readpotential used in the verify read operation is V2, and at the time of“3”-write, a selected read potential used in the verify read operationis V3.

Here, it is to be noted that V1<V2<V3.

The selected read potentials can be selected from the values within arange of 0 to 4 V, for example.

The example of the present invention can be applied to the nonvolatilesemiconductor memories in general other than the multi-level NAND flashmemory.

7. Conclusion

According to the invention, a write operation can be performed at highspeed thanks to a new verify read technique.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A nonvolatile semiconductor memory comprising: first and secondselect gate transistors; memory cells connected in series between thefirst and second select gate transistors; a source line connected to thefirst select gate transistor; a bit line connected to the second selectgate transistor; a selected word line which is connected to a selectedmemory cell as a target of a verify reading among the memory cells; anon-selected word line which is connected to a non-selected memory cellexcept the selected memory cell among the memory cells; a potentialgenerating circuit for generating a selected read potential which issupplied to the selected word line, and generating a non-selected readpotential larger than the selected read potential, which is supplied tothe non-selected word line; and a control circuit which classifies athreshold voltage of the selected memory cell to one of three groups byverifying which area among three area which are isolated by two valuesdoes a cell current of the selected memory cell belong, when theselected read potential is a first value.
 2. The memory according toclaim 1, wherein the three groups comprises: a first group which thethreshold voltage of the selected memory cell belongs in a firstthreshold range as a non-completion of writing; a second group which thethreshold voltage of the selected memory cell belongs in a secondthreshold range as a non-completion of writing higher than the firstthreshold range; and a third group which the threshold voltage of theselected memory cell belongs in a third threshold range as a completionof writing higher than the second threshold range.
 3. The memoryaccording to claim 1, wherein the control circuit set the bit line to afirst potential when the threshold voltage of the selected memory cellclassifies to the first group in a writing after the verify reading, thecontrol circuit set the bit line to a second potential higher than thefirst potential when the threshold voltage of the selected memory cellclassifies to the second group in the writing after the verify reading,and the control circuit set the bit line to a third potential higherthan the second potential when the threshold voltage of the selectedmemory cell classifies to the third group in the writing after theverify reading.
 4. The memory according to claim 1, further comprising:a sense node connected to the bit line; a first latch circuit latched apotential of the sense node at a first point after a first term from astart point which a discharge of the sense node is started by the cellcurrent; and a second latch circuit latched a potential of the sensenode at a second point after a second term longer than the first termfrom the start point.
 5. The memory according to claim 4, wherein thecontrol circuit verifies which area among the three areas does the cellcurrent of the selected memory cell belong, based on the potentialslatched the first and second latch circuits.
 6. The memory according toclaim 1, further comprising: first and second sense nodes connected tothe bit line, which precharge potentials of the first and second sensenodes are different from each other; a first latch circuit latched apotential of the first sense node at a first point after a first termfrom a start point which a discharge of the first sense node is startedby the cell current; and a second latch circuit latched a potential ofthe second sense node at a second point after a second term from a startpoint which a discharge of the second sense node is started by the cellcurrent.
 7. The memory according to claim 6, wherein the control circuitverifies which area among the three areas does the cell current of theselected memory cell belong, based on the potentials latched the firstand second latch circuits.
 8. The memory according to claim 1, whereineach of the memory cells stores three or more level data.
 9. The memoryaccording to claim 8, wherein the first value as the selected readpotential is selected from two or more values which realizes amulti-level data.
 10. The memory according to claim 1, wherein thememory is a NAND flash memory.